SIMS and XPS characterization of CdS/CdTe heterostructures grown by MBE

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:161

Article; Proceedings Paper

Boieriu, P ; Sporken, R ; Adriaens, A ; Xin, Y ; Browning, ND ; Sivananthan, S

关键词: solar cells;    CdS/CdTe;    molecular beam epitaxy;    SIMS;   

DOI  :  10.1016/S0168-583X(99)00926-X

来源: Elsevier

【 摘 要 】

In this study we have grown epitaxial layers of wurtzite-CdS on CdTe((111) over bar)B/Si substrates using molecular beam epitaxy. Indium was used to obtain n-type doping of CdS. The concentration and uniformity of In was determined by secondary ion mass spectrometry (SIMS). Indium profiles were obtained for concentrations ranging from 5 x 10(17) to 1.4 x 10(21) cm(-3) and agree well with the variation expected from the In flux. (C) 2000 Elsevier Science B.V. All rights reserved.

【 授权许可】

Free