Integration of functional complex oxide nanomaterials on silicon

Frontiers in Physics

Vila-Fungueirio, Jos M.³  Carretero-Genevrier, Adrin⁴  Rodriguez-Carvajal, Juan⁶  Ferain, Etienne⁶  Gich, Marti⁶  Rivadulla, Francisco⁷  Mestres, Narcis⁷  Gazquez, Jaume⁷  Gendry, Michel⁹  Saint-Girons, Guillaume^1,10  Bachelet, Romain^1,11 

[1] catholique de Louvain, Louvain-la-Neuve, Belgium;Bio and Soft Matter, Institute of Condensed Matter and Nanosciences, UniversitéCentro de InvestigacióConsejo Superior de Investigaciones CientíDiffraction Group, Institut Laue-Langevin, Grenoble, France;Institut des Nanotechnologies de Lyon, Centre National de la Recherche Scientifique - École Centrale de Lyon, Lyon, France;ficas, Institut de Ciégica y Materiales Moleculares, Universidad de Santiago de Compostela, Santiago de Compostela, Spain;mica Biolón en Quíncia de Materials de Barcelona, Barcelona, Spain

关键词: epitaxial growth;    Silicon;    perovskites;    thin film growth;    Solution chemistry;    molecular beam epitaxy;    Nanostructures;    Oxide nanowires;    Magnetic nanowires;    piezoelectric materials;    quartz thin films;   

DOI  :  10.3389/fphy.2015.00038

学科分类：物理（综合）

来源: Frontiers

【 摘 要 】

The combination of standard wafer-scale semiconductor processing with the properties of functional oxides opens up to innovative and more efficient devices with high value applications that can be produced at large scale. This review uncovers the main strategies that are successfully used to monolithically integrate functional complex oxide thin films and nanostructures on silicon: the chemical solution deposition approach (CSD) and the advanced physical vapor deposition techniques such as oxide molecular beam epitaxy (MBE). Special emphasis will be placed on complex oxide nanostructures epitaxially grown on silicon using the combination of CSD and MBE. Several examples will be exposed, with a particular stress on the control of interfaces and crystallization mechanisms on epitaxial perovskite oxide thin films, nanostructured quartz thin films, and octahedral molecular sieve nanowires. This review enlightens on the potential of complex oxide nanostructures and the combination of both chemical and physical elaboration techniques for novel oxide-based integrated devices.

【 授权许可】

CC BY