Mechanisms of layer growth in microwave-PECVD silan plasmas - Experiment and simulation

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:316

Article

Ramisch, E.¹  Mutzke, A.²  Schneider, R.³  Stroth, U.⁴ 

[1] Univ Stuttgart, Inst Plasmaforsch, D-70569 Stuttgart, Germany

[2] EURATOM, Max Planck Inst Plasmaphys, D-17491 Greifswald, Germany

[3] Ernst Moritz Arndt Univ Greifswald, Inst Phys, D-17491 Greifswald, Germany

[4] EURATOM, Max Planck Inst Plasmaphys, D-85748 Graching, Germany

关键词: Atoms sputtering;    Ion impact;    Applications of Monte Carlo method;    Numerical methods;    Film deposition;   

DOI  :  10.1016/j.nimb.2013.09.013

来源: Elsevier

【 摘 要 】

For the specific manipulation of barrier-layer properties, a detailed analysis of the layer-growth mechanisms in microwave-PECVD was carried out for Si-wafers with a trench structure as model cavities in the mu m range. The deposition of a-Si:H (hydrogenated amorphous silicon) layers in pure monosilane plasmas was used as model system to compare experimental results and simulations using the 2D binary collision code SDTrimSP-2D, which showed very good agreement with the experiment. Without bias the layer tends to close above the cavities from both sides, but cracks remain at the closure positions. By biasing the substrate a smoothing of the layer edges above the cavities occurred. Thus, the cavities remained open for a longer time and a more homogeneous coating of the notches is obtained. (C) 2013 Elsevier B.V. All rights reserved.

【 授权许可】

Free