Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:332

Article; Proceedings Paper

Pastuovic, Z.¹  Capan, I.²  Siegele, R.¹  Jacimovic, R.³  Forneris, J.^4,5  Cohen, D. D.¹  Vittone, E.^4,5 

[1] Australian Nucl Sci & Technol Org, Kirrawee Dc, NSW 2232, Australia

[2] Rudjer Boskovic Inst, Zagreb 10002, Croatia

[3] Jozef Stefan Inst, Ljubljana 1000, Slovenia

[4] Univ Turin, Ist Nazl Fis Nucl, Sez Torino, CNISM Sez Torino,Dept Phys, I-10125 Turin, Italy

[5] Univ Turin, Ist Nazl Fis Nucl, Sez Torino, NIS Excellence Ctr,CNISM Sez Torino, I-10125 Turin, Italy

关键词: Radiation damage;    DLTS;    Vacancy;    Cluster;    Single ion implantation;   

DOI  :  10.1016/j.nimb.2014.02.082

来源: Elsevier

【 摘 要 】

Deep Level Transient Spectroscopy (DLTS) has been used to study defects formed in bulk silicon after implantation of 8.3 MeV Si-28(3+) ions at room temperature. For this study, Schottky diodes prepared from n-type Czohralski-grown silicon wafers have been implanted in the single ion regime up to fluence value of 1 x 10(10) cm(-2) utilizing the scanning focused ion microbeam as implantation tool and the Ion Beam Induced Current (IBIC) technique for ion counting. Differential DLTS analysis of the vacancy-rich region in self-implanted silicon reveals a formation of the broad vacancy-related defect state(s) at E-c -0.4 eV. Direct measurements of the electron capture kinetics associated with this trap at E-c -0.4 eV, prior to any annealing do not show an exponential behaviour typical for the simple point-like defects. The logarithmic capture kinetics is in accordance with the theory of majority carrier capture at extended or cluster-related defects. We have detected formation of two deep electron traps at E-c -0.56 eV and E-c -0.61 eV in the interstitial-rich region of the self-implanted silicon, before any annealing. No DLTS signal originating from vacancy-oxygen trap at E-c -0.17 eV, present in the sample irradiated with 0.8 MeV neutrons, has been recorded in the self-implanted sample. Crown Copyright (C) 2014 Published by Elsevier B.V. All rights reserved.

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