Molecular dynamics simulation of helium ion implantation into silicon and its migration

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:456

Article

Liu, Lei¹  Xu, Zongwei¹  Li, Rongrong²  Zhu, Rui²  Xu, Jun²  Zhao, Junlei^3,4  Wang, Chao⁵  Nordlund, Kai^3,4  Fu, Xiu¹  Fang, Fengzhou¹ 

[1] Tianjin Univ, Ctr MicroNano Mfg Technol, State Key Lab Precis Measuring Technol & Instrume, Tianjin 300072, Peoples R China

[2] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys & Electron Microscopy, Beijing 100871, Peoples R China

[3] Univ Helsinki, Dept Phys, POB 43, FI-00014 Helsinki, Finland

[4] Univ Helsinki, Helsinki Inst Phys, POB 43, FI-00014 Helsinki, Finland

[5] Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, Beijing 100871, Peoples R China

关键词: Molecular dynamics simulation;    Ion implantation;    Helium;    Si;    Annealing;   

DOI  :  10.1016/j.nimb.2019.06.034

来源: Elsevier

【 摘 要 】

In this paper, a model of helium ion implanted monocrystalline Si was constructed by using molecular dynamics (MD) simulation method to study the interaction mechanism of helium ion with monocrystalline Si and helium ion migration. In order to study the damage effect of helium ion implantation on monocrystalline Si, identify diamond structure (IDS), radial distribution function, temperature analysis were calculated and analyzed. The effects of ion doses, beam currents and energies on the damage were studied. Helium ion implanted Si with ion doses of 1 x 10(14)/cm(2) was subsequently heated to 300 K. MD simulation results indicated that IDS damage induced by ion implantation was positively correlated with ion doses as the ion implantation increased to 1 x 10(14)/cm(2). The mean-square displacement of helium atoms was calculated during the temperature rising to 300 K. It was found that the high permeability of helium atoms in Si and the acceleration of atomic thermal motion owing to elevated temperature as well as the existence of larger stress would be helpful to the migration of implant helium atoms.

【 授权许可】

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