Ion beam synthesis of buried oxide layers in silicon carbide

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:166

Article; Proceedings Paper

Ishimaru, M ; Dickerson, RM ; Sickafus, KE

关键词: SiC;    semiconductor-on-insulator (SOI);    STEM;    EDX;    EELS;    elemental mapping;   

DOI  :  10.1016/S0168-583X(99)01057-5

来源: Elsevier

【 摘 要 】

A field emission gun scanning transmission electron microscope equipped with an energy-dispersive X-ray spectrometer (EDX) and an electron energy loss spectrometer (EELS) has been used to characterize the microstructures, elemental distributions, and chemical bonding states of oxygen ion implanted silicon carbide (SiC). 6H-SiC substrates with the (0001) orientation were implanted with 180 keV oxygen ions at 650 degrees C to fluences of 0.7 x 10(18) and 1.4 x 10(18) cm(-2). A continuous amorphous layer is formed in the as-implanted state under these irradiation conditions. The amorphous layer is uniform in the low-dose sample, while it consists of three layers in the high-dose one. EDX maps of elemental distributions suggest that the layered structure in the latter sample originates from compositional fluctuations of silicon, carbon and oxygen. EELS measurements suggest that the amorphous regions in the high-dose sample consist of well-defined SiO2 layer which is accompanied by sp(2)-bonded carbon. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

【 授权许可】

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