Analysis of excitation density effects on the scintillation properties of Ce: Gd2SiO5 (GSO) crystals

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:409

Article; Proceedings Paper

Yanagida, Takayuki¹  Koshimizu, Masanori²  Fujimoto, Yutaka²  Kurashima, Satoshi³  Iwamatsu, Kazuhiro⁴  Kimura, Atsushi³  Taguchi, Mitsumasa³  Okada, Go¹  Kawaguchi, Noriaki¹ 

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, 8916-5 Takayama Cho, Ikoma, Nara 6300192, Japan

[2] Tohoku Univ, Grad Sch Engn, Dept Appl Chem, Aoba Ku, 6-6-07 Aoba, Sendai, Miyagi 9808579, Japan

[3] Natl Inst Quantum & Radiol Sci & Technol, Takasaki Adv Radiat Res Inst, 1233 Watanuki, Takasaki, Gunma 3701292, Japan

[4] Univ Notre Dame, Notre Dame Radiat Lab, 102 Radiat Res Bldg, Notre Dame, IN 46556 USA

关键词: Scintillator;    GSO;    LET;    Excitation density;    Ce3+;   

DOI  :  10.1016/j.nimb.2017.04.001

来源: Elsevier

【 摘 要 】

We analyzed the effects of the excitation density or linear energy transfer (LET) on the scintillation temporal profiles of Gd2SiO5(GSO):Ce by using pulsed ion beams of 20 MeV H+, 50 MeV He2+, and 220 MeV C5+. The rise was faster at higher LET, while the decay was similar at largely different LETs. The LET effects on the rise are explained in terms of the competition between the quenching owing to the interaction between the P-6(J) excited states at neighboring Gd3+ ions and the energy transfer to Ce3+ ions. (C) 2017 Elsevier B.V. All rights reserved.

【 授权许可】

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