Excitation of the porous silicon photoluminescence by a multiphoton vibronic process

THIN SOLID FILMS

卷:276

Article; Proceedings Paper

Diener, J ; BenChorin, M ; Kovalev, DI ; Ganichev, SD ; Koch, F

关键词: luminescence;    optical properties;    silicon;   

DOI  :  10.1016/0040-6090(95)08073-2

来源: Elsevier

【 摘 要 】

We study the emission of photons from porous Si after high-level vibrational excitation in the Si-O absorption band using a pulsed CO2 laser. Narrow resonances in the efficiency of light generation are discovered at 1030 cm(-1) and 1084 cm(-1). For excitation at 1030 cm(-1) the familiar photoluminescence band of porous Si appears. Time-resolved pump-to-probe experiments show the same decay times for the photo and the IR-induced luminescence. We suggest a microscopic process responsible for the light emission.

【 授权许可】

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