Structure and optical properties of ZnO:V thin films with different doping concentrations

THIN SOLID FILMS

卷:517

Article

Wang, Liwei^1,2,3,4  Meng, Lijian^1,2  Teixeira, Vasco²  Song, Shigeng⁵  Xu, Zheng^3,4  Xu, Xurong^3,4 

[1] Inst Super Engn Porto, Dept Fis, P-4200072 Oporto, Portugal

[2] Univ Minho, Ctr Fis, P-4800058 Guimaraes, Portugal

[3] Beijing Jiaotong Univ, Inst Optoelect Technol, Beijing 100044, Peoples R China

[4] Beijing Jiaotong Univ, Key Lab Luminescence & Opt Informat, Minist Educ, Beijing 100044, Peoples R China

[5] Univ Paisley, Thin Film Ctr, Paisley PA1 2BE, Renfrew, Scotland

关键词: V-doped ZnO;    Magnetron sputtering;    Optical properties;   

DOI  :  10.1016/j.tsf.2008.12.043

来源: Elsevier

【 摘 要 】

A series of ZnO thin films doped with various vanadium concentrations were prepared on glass substrates by direct current reactive magnetron sputtering. The results of the X-ray diffraction (XRD) show that the films with doping concentration less than 10 at.% have a wurtzite structure and grow mainly along the c-axis orientation. The residual stress, estimated by fitting the XRD diffraction peaks, increases with the doping concentration and the grain size also has been calculated from the XRD results, decreases with increasing the doping concentration. The surface morphology of the ZnO:V thin films was examined by SEM. The optical constants (refractive index and extinction coefficient) and the film thickness have been obtained by fitting the transmittance. The optical band gap changed from 3.12 eV to 3.60 eV as doping concentration increased from 1.8 at.% to 13 at.% mol. All the results have been discussed in relation with doping concentration. (C) 2008 Elsevier B.V. All rights reserved.

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