High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

THIN SOLID FILMS

卷:574

Article

Lisco, F.¹  Kaminski, P. M.¹  Abbas, A.¹  Bowers, J. W.¹  Claudio, G.¹  Losurdo, M.²  Walls, J. M.¹ 

[1] Univ Loughborough, Sch Elect Elect & Syst Engn, Ctr Renewable Energy Syst Technol, Loughborough LE11 3TU, Leics, England

[2] IMIP CNR, Inst Inorgan Methodol & Plasmas, I-70126 Bari, Italy

关键词: Cadmium sulphide;    Pulsed direct-current magnetron sputtering;    Scanning electron microscopy;    Transmission electron microscopy;    Refractive index;   

DOI  :  10.1016/j.tsf.2014.11.065

来源: Elsevier

【 摘 要 】

Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only The CcIS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. (C) 2014 The Authors. Published by Elsevier B.V. This is an open

【 授权许可】

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