Optical spectroscopy studies of Cu2ZnSnSe4 thin films

THIN SOLID FILMS

卷:582

Article; Proceedings Paper

Yakushev, M. V.^1,2,3  Forbes, I.⁴  Mudryi, A. V.^1,5  Grossberg, M.⁶  Krustok, J.⁶  Beattie, N. S.⁶  Moynihan, M.⁴  Rockett, A.⁷  Martin, R. W.¹ 

[1] Univ Strathclyde, SUPA, Dept Phys, Glasgow G4 0NG, Lanark, Scotland

[2] URFU, Ekaterinburg 620002, Russia

[3] RAS, Ural Branch, Ekaterinburg 620002, Russia

[4] Northumbria Univ, Northumbria Photovolta Applicat Ctr, Newcastle Upon Tyne NE1 8ST, Tyne & Wear, England

[5] Natl Acad Sci Belarus, Sci Pract Mat Res Ctr, Minsk 220072, BELARUS

[6] Tallinn Univ Technol, EE-19086 Tallinn, Estonia

[7] Univ Illinois, Urbana, IL 61801 USA

关键词: Cu2ZnSnSe4;    Thin films;    Defects;    Photoluminescence;    Absorption;   

DOI  :  10.1016/j.tsf.2014.09.010

来源: Elsevier

【 摘 要 】

Cu2ZnSnSe4 thin films were synthesised by selenisation of magnetron sputtered metal precursors. The band gap determined from the absorption spectra increases from 1.01 eV at 300 K to 1.05 eV at 4.2 K. In lower quality films photoluminescence spectra show a broad, low intensity asymmetric band associated with a recombination of free electrons and holes localised on acceptors in the presence of spatial potential fluctuations. In high quality material the luminescence band becomes intense and narrow resolving two phonon replicas. Its shifts at changing excitation power suggest donor-acceptor pair recombination mechanisms. The proposed model involving two pairs of donors and acceptors is supported by the evolution of the band intensity and spectral position with temperature. Energy levels of the donors and acceptors are estimated using Arrhenius quenching analysis. (C) 2014 Elsevier B.V. All rights reserved.

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