How to prevent twin formation in epitaxial ZnO thin films grown on c-plane sapphire

THIN SOLID FILMS

卷:518

Article; Proceedings Paper

Steplecaru, C. S.¹  Martin-Gonzalez, M. S.¹  Fernandez, J. F.²  Costa-Kraemer, J. L.¹ 

[1] CSIC, Inst Microelect Madrid, CNM, Madrid 28760, Spain

[2] CSIC, Inst Ceram & Vidrio, E-28049 Madrid, Spain

关键词: ZnO;    PLD;    Epitaxy;    Twinning;    Thin film;    Sapphire;   

DOI  :  10.1016/j.tsf.2009.12.047

来源: Elsevier

【 摘 要 】

Epitaxial ZnO thin films have been grown on (0001) sapphire substrates by pulsed laser deposition. The structural and electrical transport properties of the films are measured as a function of the growth temperature and substrate cleaning procedure. The XRD measurements reveal that the cleaning procedure affects drastically the twin formation. Its origin could be attributed to a residual hydrocarbon layer or defects (oh- or O vacancies) at the sapphire surface. The electrical transport characteristics of the films are found to depend moderately on the existence of twinning. (C) 2009 Elsevier B.V. All rights reserved.

【 授权许可】

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