Crystalline-silicon-based infra-red LEDs and routes to laser diodes

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卷:519

Article

Lourenco, M. A.¹  Homewood, K. P.¹ 

[1] Univ Surrey, Adv Technol Inst, Fac Engn & Phys Sci, Guildford GU2 7XH, Surrey, England

关键词: Dislocation engineering;    Light-emitting diodes;    Rare earth compounds;    Silicon;   

DOI  :  10.1016/j.tsf.2011.05.020

来源: Elsevier

【 摘 要 】

We review progress in silicon LEDs using dislocation engineering to achieve high temperature operation, a process that is fully CMOS (Complementary Metal Oxide Semiconductor) compatible. We concentrate on devices operating in the near infra-red where high value applications are. The need for silicon emitters, lasers and optical amplifiers is discussed followed by an outline of previous approaches and possible future routes explored. Results on gain in silicon are reported and routes to electrically pumped injection lasers and optical amplifiers considered. Extension of 1.1 and 1.5 mu m devices to other wavelengths is discussed. (C) 2011 Elsevier B. V. All rights reserved.

【 授权许可】

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