Final Report for Department of Energy Grant DE-FG02-97ER45666 ?Interface Diffusion and Deep Level Formation of SiC and Other Wide Gap Materials?

Brillson, Leonard J.

The Ohio State University, Columbus, Ohio

关键词: Electronic Materials, Semiconductors, Interfaces, Schottky Barriers, Heterojunctions, Silicon Carbide, Zinc Oxide, Cathodoluminescence Spectroscopy, Surface Science, X-Ray Photoemission Spectroscopy;   

RP-ID  :  DOEER45666
RP-ID  :  FG02-97ER45666
RP-ID  :  877954

美国|英语

来源: UNT Digital Library

【 摘 要 】

This final report describes the research effort focusing on the nature of charge transfer and localized electronic structure at semiconductor interfaces, one of the most fundamental issues in the solid state. The basic charge exchange between two materials in general is directly connected with the systematic atomic bonding changes and redistribution that occurs at the nanoscale interface. Our programhas extended our understanding of the atomic-scale nature of electrostatic barrier formation, heterojunction band offsets, and the optical and electronic features of impurity confinement in a set of model materials systems, including nanometer-scale wide band gap semiconductor and insulator structures. This fundamentally new class of materials investigation utilizes a powerful and unique combination of techniques that are revealing the atomic-scale movement, chemical bonding, and resultant charge transfer across well-defined model interfaces.