Influence of annealing on microstructure and optical properties of hot wall deposited PbxSn(1-x)S thin films

THIN SOLID FILMS

卷:616

Article

Bashkirov, S. A.¹  Gremenok, V. F.¹  Ivanov, V. A.¹  Bente, K.²  Gladyshev, P. P.³  Zelenyak, T. Yu.³  Saad, A. M.⁴  Tivanov, M. S.⁵ 

[1] Natl Acad Sci Belarus, Sci Pract Mat Res Ctr, State Sci & Prod Assoc, P Brovka Str 19, Minsk 220072, BELARUS

[2] Univ Leipzig, Inst Mineral Kristallog & Mat, Schamhorststr 20, D-04275 Leipzig, Germany

[3] Dubna Int Univ Nat Soc & Man, Univ Skaya Str 19, Dubna 141980, Moscow Oblast, Russia

[4] Al Balqa Appl Univ, POB 4545, Amman 11953, Jordan

[5] Belarusian State Univ, Nezavisimosti Av 4, Minsk 220030, BELARUS

关键词: Lead-tin sulfide;    Thin films;    Microstructure;    Optical properties;    Electrical properties;   

DOI  :  10.1016/j.tsf.2016.10.003

来源: Elsevier

【 摘 要 】

PbxSn(1-x)S (0.05 < 020) thin films with the thickness of 2 mu m were deposited on glass substrates using hot wall vacuum deposition method at the vacuum pressure of 5 x 10(-4) Pa, wall temperature of 600 degrees C, substrate temperature of 300 degrees C and subsequently annealed at 450 degrees C in vacuum at 5 x 10(-4) Pa. The microstructure and optical properties of the as-deposited and annealed films were examined in relation to the film composition. The explanations of lattice parameter deviations from the bulk crystals for both as-deposited and annealed PbxSn(1-x)S thin films are discussed. The PbxSn(1-x)S thin films exhibit a preferred orientation around the [111] direction. The annealing decreases the film microstrain values and increases the grain size and the degree of preferred orientation. Thermal probe measurements showed the sulfur-deficient films to be p-type and the sulfur-rich films to be n-type. The PbxSn(1-x)S films exhibit direct allowed transitions with energy band gap E-g(d) increasing with the increase of Pb mole fraction. The E-g(d) values for as-deposited films range from 0.95 to 0.98 eV and for annealed films they variy from 0.90 to 0.94 eV. (C) 2016 Elsevier B.V. All rights reserved.

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