Thin silicon films ranging from amorphous to nanocrystalline obtained by hot-wire CVD

THIN SOLID FILMS

卷:383

Article; Proceedings Paper

Soler, D ; Fonrodona, M ; Voz, C ; Bertomeu, J ; Andreu, J

关键词: amorphous silicon;    nanocrystalline silicon;    HWCVD;   

DOI  :  10.1016/S0040-6090(00)01615-1

来源: Elsevier

【 摘 要 】

In this paper, we have presented results on silicon thin films deposited by hot-wire CVD at low substrate temperatures (200 degreesC). Films ranging from amorphous to nanocrystalline were obtained by varying the filament temperature from 1500 to 1800 degreesC. A crystalline fraction of 50% was obtained for the sample deposited at 1700 degreesC. The results obtained seemed to indicate that atomic hydrogen plays a leading role in the obtaining of nanocrystalline silicon. The optoelectronic properties of the amorphous material obtained in these conditions are slightly poorer than the ones observed in device-grade films grown by plasma-enhanced CVD due to a higher hydrogen incorporation (13%). (C) 2001 Elsevier Science B.V. All rights reserved.

【 授权许可】

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