Flexible n-i-p thin filmsilicon solar cells on polyimide foils with textured ZnO:Ga back reflector

THIN SOLID FILMS

卷:571

Article

Marins, E.^1,2  Warzecha, M.¹  Micharda, S.¹  Hotovy, J.^1,3  Boettler, W.¹  Alpuim, P.²  Finger, F.¹ 

[1] Forschungszentrum Julich, Photovolta IEK 5, Inst Energy & Climate Res, D-52425 Julich, Germany

[2] Univ Minho, Dept Phys, P-4800058 Guimaraes, Portugal

[3] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Bratislava 81219, Slovakia

关键词: Microcrystalline silicon;    Transparent conducting oxide;    Light trapping;    Polyimide;    Flexible substrate;    Solar cells;   

DOI  :  10.1016/j.tsf.2014.09.026

来源: Elsevier

【 摘 要 】

In thin film silicon solar cells on opaque substrates in n-i-p deposition sequence where the textured transparent conductive oxide (TCO) layer serves as a back reflector, one can independently optimize the morphology of the TCO layer without compromise on transparency and conductivity of this layer and further adjust the electro-optical properties of the back contact by using additional layers on top of the textured TCO. In the present work, we use this strategy to obtain textured back reflectors for solar cells in n-i-p deposition sequence on non-transparent flexible plastic foils. Gallium doped ZnO (ZnO:Ga) filmswere deposited on polyimide substrates by DC magnetron sputtering at a temperature of 200 degrees C. A wet-chemical etching step was performed by dipping the ZnO:Ga covered foil into a diluted HCl solution. The textured ZnO:Ga is then coated with a highly reflective Ag/ZnO double layer. On this back reflector, we develop thin film silicon solar cells with a microcrystalline silicon absorber layer. The current density for the cell with the textured ZnO:Ga layer is similar to 23 mA/cm(2), 4 mA/cm(2) higher than the one without such layer, and a maximum efficiency of 7.5% is obtained for a 1 cm(2) cell. (C) 2014 Elsevier B.V. All rights reserved.

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