Growth of ZnO:Al by atomic layer deposition: Deconvoluting the contribution of hydrogen interstitials and crystallographic texture on the conductivity

THIN SOLID FILMS

卷:690

Article

Mauit, Ozhet¹  Caffrey, David^2,3  Ainabayev, Ardak^2,3,4  Kaisha, Aitkazy^2,3  Toktarbaiuly, Olzat¹  Sugurbekov, Yerzhigit¹  Sugurbekova, Gulnar⁴  Shvets, Igor, V^2,3  Fleischer, Karsten^2,3,5 

[1] Nazarbayev Univ, Natl Lab Astana, Astana, Kazakhstan

[2] Trinity Coll Dublin, Sch Phys, Dublin 2, Ireland

[3] Trinity Coll Dublin, CRANN, Dublin 2, Ireland

[4] Nazarbayev Univ, Astana, Kazakhstan

[5] Dublin City Univ, Sch Phys Sci, Dublin 9, Ireland

关键词: Transparent conducting oxide;    Atomic layer deposition;    Aluminium doped zinc oxide;    Hydrogen;    Crystallographic texture;   

DOI  :  10.1016/j.tsf.2019.137533

来源: Elsevier

【 摘 要 】

Aluminium doped ZnO (AZO) is an interesting low cost transparent conducting oxide with further use as an inorganic transport layer in multilayer solar cells. Here we present our work on atomic layer deposited (ALD) thin films where, with optimised growth conditions, we can obtain resistivities of 1 x 10(-3) Omega cm even in 50-80 nm thin films grown at low temperatures (250 degrees C). We discuss the influence of crystallographic texture for ALD grown films by comparing plain glass, c-plane Al2O3, and alpha-plane Al2O3 substrates. We show that the doping mechanism in ALD grown AZO is more complex than for e.g. sputtered material as a substantial hydrogen interstitial related background doping occurs. We compare results from as grown samples with those briefly annealed at 320 degrees C in nitrogen. This process leads to an increased Hall mobility due to improved grain boundary passivation, but reduced carrier concentration due to partial loss of hydrogen interstitials.

【 授权许可】

Free