Epitaxial Cu2ZnSnSe4 thin films and devices

THIN SOLID FILMS

卷:582

Article; Proceedings Paper

Redinger, Alex¹  Groiss, Heiko²  Sendler, Jan¹  Djemour, Rabie¹  Regesch, David¹  Gerthsen, Dagmar²  Siebentritt, Susanne¹ 

[1] Univ Luxembourg, Phys & Mat Sci Res Unit, Lab Photovolta, L-4422 Belvaux, Luxembourg

[2] Karlsruhe Inst Technol, Electron Microscopy Lab, D-76131 Karlsruhe, Germany

关键词: Copper zinc tin selenide;    Epitaxy;    Kesterite;    Transmission electron microscopy;    Solar cells;   

DOI  :  10.1016/j.tsf.2014.11.040

来源: Elsevier

【 摘 要 】

Epitaxial Cu2ZnSnSe4 (CZTSe) thin films have been grown via high temperature coevaporation on GaAs(001). Electron backscattering diffraction confirms epitaxy in a wide compositional range. Different secondary phases are present in the epitaxial layer. The main secondary phases are Cu2SnSe3 and ZnSe which grow epitaxially on top of the CZTSe. Transmission electron microscopy measurements show that the epitaxial CZTSe grows predominantly parallel to the c-direction. Epitaxial CZTSe solar cells with a maximum power conversion efficiency of 2.1%, an open-circuit voltage of 223 mV and a current density of 16 mA/cm(2) are presented. (C) 2014 Elsevier B.V. All rights reserved.

【 授权许可】

Free