Single-crystal copper films on sapphire

THIN SOLID FILMS

卷:709

Article

Janssen, G. C. A. M.¹  van der Pers, N. M.²  Hendrikx, R. W. A.²  Bottger, A. J.²  Kwakernaak, C.²  Rieger, B.³  Sluiter, M. H. F.² 

[1] Delft Univ Technol, Precis & Microsyst Engn, 3ME, Mekelweg 2, NL-2628 CD Delft, Netherlands

[2] Delft Univ Technol, Mat Sci & Engn, 3ME, Mekelweg 2, NL-2628 CD Delft, Netherlands

[3] Delft Univ Technol, Imaging Phys, Appl Sci, Lorentzweg 1, NL-2628 CJ Delft, Netherlands

关键词: Sapphire;    Aluminum trioxide;    Corundum;    Copper;    Thin film;    Single-crystal;    Oxygen;    Dissolution;   

DOI  :  10.1016/j.tsf.2020.138137

来源: Elsevier

【 摘 要 】

Single-crystal copper films on sapphire have recently been reported upon in relation to graphene growth on these films. In the present paper the kinetics of the formation of single crystal copper films is investigated. We demonstrate the importance of heating the sapphire substrate in 1000 hPa oxygen, followed by a fast cooling prior to depositing the copper film. The importance of this treatment is tentatively explained by the dissolution of oxygen in sapphire and subsequent out-diffusion during recrystallization of the copper film to form a copper-oxide interface layer. Also, the importance of avoiding oxygen incorporation in the sputter deposited film is demonstrated.

【 授权许可】

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