Growth and characterization of group-III impurity-doped semiconducting BaSi2 films grown by molecular beam epitaxy

THIN SOLID FILMS

卷:515

Article; Proceedings Paper

Kobayashi, M. ; Morita, K. ; Suemasu, T.

关键词: BaSi2;    molecular beam epitaxy;   

DOI  :  10.1016/j.tsf.2007.02.050

来源: Elsevier

【 摘 要 】

Ga- or In-doped BaSi2 films were grown on Si(III) by molecular beam epitaxy (MBE). The Ga-doped BaSi2 showed n-type conductivity. The electron concentration and resistivity of the Ga-doped BaSi2 depended on the Ga temperature; however, the electron concentration and resistivity could not be controlled properly. In contrast, the In-doped BaSi2 showed p-type conductivity and its hole concentration was controlled in the range between 10(16) and 10(17) cm(-3) at RT. (c) 2007 Elsevier B.V. All rights reserved.

【 授权许可】

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