Low surface recombination velocity in n-Si passivated by catalytic-chemical vapor deposited alumina films

THIN SOLID FILMS

卷:575

Article

Ogita, Yoh-Ichiro¹  Aizawa, Yotaro¹ 

[1] Kanagawa Inst Technol, Atsugi, Kanagawa 2430292, Japan

关键词: Solar cells;    Passivation films;    Alumina films;    Hot-Wire CVD;    Cat-CVD;    Surface recombination velocity;    Al2O3;   

DOI  :  10.1016/j.tsf.2014.10.023

来源: Elsevier

【 摘 要 】

The surface recombination velocity (S-0) in n-type Si (n-Si) wafers has been reduced below 0.1 cm/s by dint of positive fixed charges created by alumina (AlOx) films deposited at a film-temperature of 230 degrees C by catalytic chemical vapor deposition (Cat-CVD) using trimethyl aluminum (TMA) and O-2. Positive fixed charges of the order of 1012 charges/cm(2) can be created in AlOx films deposited under O-2/TMA flow-rate ratios in the range of 3.5-6.5. The extremely small S-0 has been confirmed to be obtainable mainly due to a band bending effect brought about by the positive charges. The polarity and amount of the fixed charges can be determined by the flow-rate ratio of O-2/TMA. (C) 2014 Elsevier B. V. All rights reserved.

【 授权许可】

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