Black-silicon production process by CF4/H2 plasma

THIN SOLID FILMS

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Article

Vassallo, E.¹  Pedroni, M.¹  Pietralunga, S. M.^2,4  Caniello, R.¹  Cremona, A.¹  Di Fonzo, F.⁴  Ghezzi, F.¹  Inzoli, F.¹  Monteleone, G.²  Nava, G.⁴  Spampinato, V.¹  Tagliaferri, A.^3,4  Zani, M.³ 

[1] CNR, Ist Fis Plasma P Caldirola, Via R Cozzi 53, I-20125 Milan, Italy

[2] CNR, Ist Foton & Nanotecnol, Pzza Leonardo da Vinci 32, I-20133 Milan, Italy

[3] Politecn Milan, Dip Fis, Pzza Leonardo da Vinci 32, I-20133 Milan, Italy

[4] Ist Italiano Tecnol, Ctr Nano Sci & Technol PoliMi, Via G Pascoli 70-3, I-20133 Milan, Italy

关键词: Plasma process;    Reactive ion etching;    Reflectance;    Solar cells;    Silicon surface texturing;   

DOI  :  10.1016/j.tsf.2016.02.008

来源: Elsevier

【 摘 要 】

Nanoscale structures in silicon have been produced by means of a maskless plasma process that employs tetrafluoromethane and hydrogen. The influence of the radio-frequency power and process time on the surface texturing was studied. Desirable texturing effect has been achieved by applying an RF power in the range of 200280 W and process time in the range of 20-30 min. The textured surface is characterized by nanopillars with lateral dimensions ranging from 50 to 300 nm and with a depth in the 100-300 nm range. Depending on process parameters in the plasma etching recipe, the optical reflectance of the silicon surface is lowered and R < 5% is reached in the range going from the visible to the near-IR region. (C) 2016 Elsevier B.V. All rights reserved.

【 授权许可】

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