期刊论文详细信息
THIN SOLID FILMS 卷:545
IR emission from the target during plasma magnetron sputter deposition
Article
Cormier, P. -A.1  Thomann, A. -L.1  Dolique, V.2  Balhamri, A.3,4  Dussart, R.1  Semmar, N.1  Lecas, T.1  Brault, P.1  Snyders, R.3,5  Konstantinidis, S.5 
[1] Univ Orleans, GREMI, F-45067 Orleans 2, France
[2] Univ Lyon 1, LMA, F-69622 Villeurbanne, France
[3] Univ Mons, ChIPS, B-7000 Mons, Belgium
[4] Univ Hassan 1, Ecole Super Technol, Berrechid 218, Morocco
[5] Mat Nova R&D Ctr, Mons, Belgium
关键词: Magnetron sputter deposition;    Superficial target heating;    IR emission;    Energetic contributions at the substrate;   
DOI  :  10.1016/j.tsf.2013.07.025
来源: Elsevier
PDF
【 摘 要 】

In this article, energy flux measurements at the substrate location are reported. In particular, the energy flux related to IR radiation emanating from the titanium(10 cm in diam.) target surface is quantified during magnetron sputter deposition processes. In order to modulate the plasma-target surface interaction and the radiative energy flux thereof, the working conditions were varied systematically. The experiments were performed in balanced and unbalanced magnetic field configurations with direct current (DC), pulsed DC and high power impulse magnetron sputtering (HiPIMS) discharges. The power delivered to the plasma was varied too, typically from 100 to 800 W. Our data show that the IR contribution to the total energy flux at the substrate increases with the supplied sputter power and as the discharge is driven in a pulse regime. In the case of HiPIMS discharge generated with a balanced magnetic field, the energy flux associated to the IR radiation produced by the target becomes comparable to the energy flux originating from collisional processes (interaction of plasma particles such as ions, electron, sputtered atoms etc. with the substrate). From IR contribution, it was possible to estimate the rise of the target surface temperature during the sputtering process. Typical values found for a titanium target are in the range 210 degrees C to 870 degrees C. (C) 2013 Elsevier B. V. All rights reserved.

【 授权许可】

Free   

【 预 览 】
附件列表
Files Size Format View
10_1016_j_tsf_2013_07_025.pdf 879KB PDF download
  文献评价指标  
  下载次数:19次 浏览次数:0次