Optimization of hydrogenated amorphous silicon germanium thin films and solar cells deposited by hot wire chemical vapor deposition

THIN SOLID FILMS

卷:595

Article; Proceedings Paper

Veldhuizen, L. W.¹  Van der Werf, C. H. M.²  Kuang, Y.¹  Bakker, N. J.²  Yun, S. J.³  Schropp, R. E. I.^1,2 

[1] Eindhoven Univ Technol Tu E, Dept Appl Phys Plasma & Mat Proc, NL-5600 MB Eindhoven, Netherlands

[2] ECN Solliance, Energy Res Ctr Netherlands ECN, NL-5656 AE Eindhoven, Netherlands

[3] ETRI, Convergence Components & Mat Res Lab, Thin Film Solar Cell Technol Team, Daejeon 305700, South Korea

关键词: Amorphous silicon germanium;    Hot wire chemical vapor deposition;    Solar cells;    Ambipolar diffussion length;   

DOI  :  10.1016/j.tsf.2015.05.055

来源: Elsevier

【 摘 要 】

This work studies hydrogenated amorphous silicon germanium films, deposited by hot wire chemical vapor deposition, to be used as low band gap absorber material in thin film solar cells. Material properties, such as the bonding configurations, the ambipolar diffusion length and the optical band gap, were examined as a function of the substrate temperature and germanium content. Our best materials were incorporated in single junction solar cells with high long-wavelength response and a tandem solar cell with an efficiency of 10.42%. (C) 2015 The Authors. Published by Elsevier B.V.

【 授权许可】

Free