Structural properties of Cu(In,Ga)Se2 thin films prepared from chemically processed precursor layers

THIN SOLID FILMS

卷:517

Article; Proceedings Paper

Hibberd, C. J.¹  Ganchev, M.²  Kaelin, M.³  Dann, S. E.⁴  Bilger, G.⁵  Upadhyaya, H. U.¹  Tiwari, A. N.^1,3 

[1] Loughborough Univ Technol, Ctr Renewable Energy Syst Technol, Holywell Pk GX Area, Dept Elect & Elect Engn, Loughborough LE11 3TU, Leics, England

[2] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BU-1784 Sofia, Bulgaria

[3] ETH, Thin Film Phys Grp, Solid State Phys Lab, CH-8005 Zurich, Switzerland

[4] Loughborough Univ Technol, Dept Chem, Loughborough LE11 3TU, Leics, England

[5] Univ Stuttgart, Inst Phys Elekt, D-70569 Stuttgart, Germany

关键词: Thin film solar cells;    CuInGaSe2;    CIGS;    Non vacuum;    Ion exchange;   

DOI  :  10.1016/j.tsf.2008.10.094

来源: Elsevier

【 摘 要 】

We have developed a chemical process for incorporating copper into indium gallium selenide layers with the goal of creating a precursor structure for the formation of copper indium gallium diselenide (CIGS) photovoltaic absorbers. Stylus profilometry, EDX, Raman spectroscopy, XRD and SIMS measurements show that when indium gallium selenide layers are immersed in a hot copper chloride solution, copper is incorporated as copper selenide with no increase in the thickness of the layers. Further measurements show that annealing this precursor structure in the presence of selenium results in the formation of CIGS and that the supply of selenium during the annealing process has a strong effect on the morphology and preferred orientation of these layers. When the supply of Se during annealing begins only once the substrate temperature reaches approximate to 400 degrees C, the resulting CIGS layers are smoother and have more pronounced preferred orientation than when Se is supplied throughout the entire annealing process. (C) 2008 Elsevier B.V. All rights reserved.

【 授权许可】

Free