RbF post deposition treatment for narrow bandgap Cu(In, Ga)Se2 solar cells

THIN SOLID FILMS

卷:670

Article; Proceedings Paper

Feurer, Thomas¹  Fu, Fan^1,2  Weiss, Thomas Paul^1,3  Avancini, Enrico¹  Lockinger, Johannes¹  Buecheler, Stephan¹  Tiwari, Ayodhya N.¹ 

[1] Empa Swiss Fed Labs Mat Sci & Technol, Lab Thin Films & Photovolta, Ueberlandstr 129, CH-8600 Dubendorf, Switzerland

[2] EPFL, Photovolta & Thin Film Elect Lab PV Lab, Rue Maladiere 71b, CH-2002 Neuchatel, Switzerland

[3] Univ Luxembourg, Phys & Mat Sci Res Unit, Lab Photovolta, L-4422 Belvaux, Luxembourg

关键词: Photovoltaics;    Copper indium gallium selenide;    Narrow bandgap;    Thin film solar cells;    Tandem solar cells;    Rubidium fluoride;    Post deposition treatment;   

DOI  :  10.1016/j.tsf.2018.12.003

来源: Elsevier

【 摘 要 】

Multi-junction solar cells are known to have a considerably increased efficiency potential over their typical single junction counterparts. In order to produce low cost and lightweight multi-junction devices, the availability of suitable narrow (< 1.1 eV) bandgap bottom cells is paramount. A possible absorber for such a bottom cell is the Cu(In, Ga)Se-2 (CIGS) compound semiconductor, one of the most efficient thin film materials to date. In this contribution we report on the RbF post deposition treatment of narrow bandgap CIGS absorbers grown with a single bandgap grading approach. We discuss the necessary deposition conditions and the observed improvements on solar cells performance. A certified record efficiency of 18.0% for an absorber with 1.00 eV optoelectronic bandgap is presented and its suitability for perovskite/CIGS tandem devices is shown.

【 授权许可】

Free