Atmospheric pressure chemical vapour deposition of vanadium arsenide thin films via the reaction of VCl4 or VOCl3 with tBuAsH2

THIN SOLID FILMS

卷:537

Article

Thomas, Tegan¹  Blackman, Christopher S.¹  Parkin, Ivan P.¹  Carmalt, Claire J.¹ 

[1] UCL, Dept Chem, Mat Chem Ctr, London WC1H 0AJ, England

关键词: Arsenide;    Chemical vapour deposition;    Thin film;   

DOI  :  10.1016/j.tsf.2013.04.144

来源: Elsevier

【 摘 要 】

Thin films of vanadium arsenide were deposited via the dual-source atmospheric pressure chemical vapour deposition reactions of VCl4 or VOCl3 with (BuAsH2)-Bu-t. Using the vanadium precursor VCl4, films were deposited at substrate temperatures of 550-600 degrees C, which were black-gold in appearance and were found to be metal-rich with high levels of chlorine incorporation. The use of VOCl3 as the vanadium source resulted in films being deposited between 450 and 600 degrees C and, unlike when using VCl4, were silver in appearance. The films deposited using VOCl3 demonstrated vanadium to arsenic ratios close to 1:1, and negligible chlorine incorporation. Films deposited using either vanadium precursor were identified as VAs using powder X-ray diffraction and possessed borderline metallic/semiconductor resistivities. (C) 2013 Published by Elsevier B.V.

【 授权许可】

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