Characteristics of n-type ZnO nanorods on top of p-type poly(3-hexylthiophene) heterojunction by solution-based growth

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Lee, Chun-Yu¹  Huang, Jing-Shun¹  Hsu, Sheng-Hao²  Su, Wei-Fang^3,4  Lin, Ching-Fuh^1,5,6 

[1] Natl Taiwan Univ, Grad Inst Photon and Optoelect, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Inst Polymer Sci & Engn, Taipei 10617, Taiwan

[3] Natl Taiwan Univ, Grad Inst Mat Sci & Engn, Taipei 10617, Taiwan

[4] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, Taiwan

[5] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

[6] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

关键词: ZnO;    Nanorods;    P3HT;    Electroluminescence;    p-n junction;    Hydrothermal method;    Spin coating;    FESEM;    XRD;   

DOI  :  10.1016/j.tsf.2010.06.005

来源: Elsevier

【 摘 要 】

We report that ZnO nanorods (NRs) are grown on an organic layer of poly(3-hexylthiophene) (P3HT) using a modified seeding layer Thus, ZnO NRs/P3HT heterojunction light-emitting diodes could be fabricated using the hydrothermal method, in which ZnO acts as an n-type material and P3HT as a p-type material The ZnO NRs improve the electron transportation in the devices. A three-fold enhancement of current density of the device is observed due to the NRs formed on the P3HT The electroluminescence (EL) of the optimized ZnO-based device is 1 5 times larger than that without NRs The influence of the P3HT thickness for the EL spectrum is also discussed (C) 2010 Elsevier B V All rights reserved

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