Hot Wire CVD for thin film triple junction cells and for ultrafast deposition of the SiN passivation layer on polycrystalline Si solar cells

THIN SOLID FILMS

卷:516

Article; Proceedings Paper

Schropp, R. E. I.¹  Franken, R. H.¹  Goldbach, H. D.¹  Houweling, Z. S.¹  Li, H.¹  Rath, J. K.¹  Schuettauf, J. W. A.¹  Stolk, R. L.¹  Verlaan, V.¹  van der Werf, C. H. M.¹ 

[1] Univ Utrecht, Fac Sci, SID Phys Devices, NL-3508 TA Utrecht, Netherlands

关键词: HWCVD;    solar cells;    multijunction;    efficiency;    stability;    silicon nitride;   

DOI  :  10.1016/j.tsf.2007.06.052

来源: Elsevier

【 摘 要 】

We present recent progress on hot-wire deposited thin film solar cells and applications of silicon nitride. The cell efficiency reached for mu c-Si:H n-i-p solar cells on textured Ag/ZnO presently is 8.5%, in line with the state-of-the-art level for mu c-Si:H n-i-p's for any method of deposition. Such cells, used in triple junction cells together with hot-wire deposited proto-Si:H and plasma-deposited SiGe:H, have reached 10.5% efficiency. The single junction mu c-Si:H n-i-p cell is entirely stable under prolonged light soaking. The triple junction cell, including protocrystalline i-layers, is within 3% stable, due to the limited thicknesses of the two top cells. The application of SiNx:H at a deposition rate of 3 nm/s to polycrystalline Si wafer solar cells has led to cells with 15.7% efficiency. We have also achieved record high deposition rates of 7.3 nm/s for transparent and dense SiNx;H. Hot-wire SiNx:H is likely to be the first large commercial application of the Hot Wire CVD (Cat-CVD) technology. (C) 2007 Elsevier B.V. All rights reserved.

【 授权许可】

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