Lattice-Mismatched III-V Epilayers for High-Efficiency Photovoltaics

Ahrenkiel, Scott Phillip¹ 

[1] South Dakota School of Mines & Technology

关键词: photovoltaics;    semiconductors;    transmission electron microscopy;    lattice mismatch;    multijunction;   

DOI  :  10.2172/1093594
RP-ID  :  DOE/ER/46503
PID  :  OSTI ID: 1093594

学科分类：再生能源与代替技术

美国|英语

来源: SciTech Connect

【 摘 要 】

The project focused on development of new approaches and materials combinations to expand and improve the quality and versatility of lattice-mismatched (LMM) III-V semiconductor epilayers for use in high-efficiency multijunction photovoltaic (PV) devices. To address these goals, new capabilities for materials synthesis and characterization were established at SDSM&T that have applications in modern opto- and nano-electronics, including epitaxial crystal growth and transmission electron microscopy. Advances were made in analyzing and controlling the strain profiles and quality of compositional grades used for these technologies. In particular, quaternary compositional grades were demonstrated, and a quantitative method for characteristic X-ray analysis was developed. The project allowed enhanced collaboration between scientists at NREL and SDSM&T to address closely related research goals, including materials exchange and characterization.