Negative thermal expansion ZrW2O8 thin films prepared by pulsed laser deposition

SURFACE & COATINGS TECHNOLOGY

卷:205

Article

Liu, Hongfei¹  Zhang, Zhiping³  Zhang, Wei²  Chen, Xiaobin²  Cheng, Xiaonong³ 

[1] Yang Zhou Univ, Testing Ctr, Yang Zhou 225009, Peoples R China

[2] Yang Zhou Univ, Sch Phys Sci & Technol, Yang Zhou 225009, Peoples R China

[3] Jiang Su Univ, Sch Mat Sci & Engn, Zhen Jiang 212013, Peoples R China

关键词: Negative thermal expansion;    Zirconium tungstate;    Thin film;    Pulsed laser deposition;   

DOI  :  10.1016/j.surfcoat.2011.05.010

来源: Elsevier

【 摘 要 】

Negative thermal expansion ZrW2O8 thin films has been grown on quartz substrates by pulsed laser deposition (PLD) method followed by annealing at various temperatures. The influences of annealing temperature on the morphology and phase composition of the ZrW2O8 thin films were investigated. The X-ray diffraction (XRD) and X-ray photoelectron spectroscope (XPS) analyses revealed that the as-deposited ZrW2O8 thin film showed an amorphous phase, the stoichiometry of the as-deposited thin film was close to that of the ZrW2O8 ceramic target, the crystallized cubic ZrW2O8 thin films were prepared after annealing at 1200 degrees C. The scanning electron microscope (SEM) confirmed that the ZrW2O8 thin film deposited on the substrate heated at 650 degrees C was smooth and compact, the crystallized cubic ZrW2O8 thin film was a polycrystalline film and its grain size grew to be larger. The high temperature X-ray diffraction analyses showed that all the peaks ascribe to the ZrW2O8 thin film shifted to higher angle with the increasing temperatures, which demonstrated that the cubic ZrW2O8 thin film exhibited negative thermal expansion and its thermal expansion coefficient was calculated to be -11.378 x 10(-6)K(-1) from 20 degrees C to 600 degrees C. (C) 2011 Elsevier B.V. All rights reserved.

【 授权许可】

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