Deposition of thermally stable tungsten nitride thin films by reactive magnetron sputtering

SURFACE & COATINGS TECHNOLOGY

卷:375

Article

Abdelhameed, A. H.^1,2  Jacob, W.¹ 

[1] Max Planck Inst Plasma Phys, Boltzmannstr 2, D-85748 Garching, Germany

[2] Max Planck Inst Phys & Astrophys, Fohringer Ring 6, D-80805 Munich, Germany

关键词: Tungsten nitride;    Thermal stability;    Magnetron sputtering;    Decomposition;    Nitrogen release;   

DOI  :  10.1016/j.surfcoat.2019.07.046

来源: Elsevier

【 摘 要 】

Thermally stable tungsten nitride (W2N) thin films with thickness similar to 0.9 mu m were successfully deposited on Si and graphite substrates by reactive magnetron sputtering. The produced layers show no phase change or nitrogen release up to 1300 K. These novel layers survived annealing at 1200 K for 50 h without any measurable nitrogen loss or a phase transition from W2N to bcc W. X-ray diffraction, thermal desorption spectroscopy and Rutherford back scattering were utilized to characterize these layers and investigate the nitrogen release mechanism. The micro-structure of the layers was dominated by a grainy structure with porosity less than 16% and a strong texture in (200) orientation in contrast to the common (111) orientation. For annealing temperatures higher than 1200 K nitrogen release was observed, but this was attributed to a chemical reaction of W2N with the substrate material(s).

【 授权许可】

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