Study of the effect of RF-power and process pressure on the morphology of copper and titanium sputtered by ICIS

SURFACE & COATINGS TECHNOLOGY

卷:327

Article

Loch, Daniel A. L.¹  Ehiasarian, Arutiun P.¹ 

[1] Sheffield Hallam Univ, Natl HIPIMS Technol Ctr, Howard St, Sheffield, S Yorkshire, England

关键词: ICIS;    HIPIMS;    IPVD;    Pulsed plasma;    Magnetron free sputtering;   

DOI  :  10.1016/j.surfcoat.2016.10.018

来源: Elsevier

【 摘 要 】

Inductively coupled impulse sputtering is a promising new technique for highly ionised sputter deposition of materials. It combines pulsed RF-power ICP technology to generate plasma with pulsed high voltage DC bias on the cathode to eliminate the need for a magnetron. To understand the effect of power and pressure on the coating morphology, copper and titanium films have been deposited in a power-pressure matrix. The RF-power was increased from 2000 to 4000 W. The pressure was set to 6 Pa and 13 Pa respectively. For copper, the morphology changes from columnar to fully dense with increasing power and the deposition rate drops from 360 nm h(-1) to 210 nm h(-1) with higher process pressure. Titanium morphology does not change with power or pressure. The deposition rate is lower than predicted by the differences in sputtering yields at 68 nm h(-1) for a pressure of 6 Pa. (C) 2016 The Authors. Published by Elsevier B.V.

【 授权许可】

Free