Growth of hard amorphous Ti-Al-Si-N thin films by cathodic arc evaporation

SURFACE & COATINGS TECHNOLOGY

卷:235

Article

Fager, H.¹  Andersson, J. M.²  Lu, J.¹  Joesaar, M. P. Johansson^2,3  Oden, M.³  Hultman, L.¹ 

[1] Linkoping Univ, Thin Film Phys Div, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden

[2] Seco Tools AB, SE-73782 Fagersta, Sweden

[3] Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden

关键词: PVD;    Transmission electron microscopy (TEM);    Thin films;    Amorphous;    TiAlSiN;    Hardness;   

DOI  :  10.1016/j.surfcoat.2013.07.014

来源: Elsevier

【 摘 要 】

Ti1-x-yAlxSiyNz (0.02 <= x <= 0.46, 0.02 <= y <= 0.28, and 1.08 <= z <= 1.29) thin films were grown on cemented carbide substrates in an industrial scale cathodic arc evaporation system using Ti-Al, Ti-Si, and Ti-Al-Si cathodes in a N-2 atmosphere. The microstructure of the as-deposited films changes from nanocrystalline to amorphous by addition of Al and Si to TiN. Upon incorporation of 12 at.% Si and 18 at% Al, the films assume an X-ray amorphous state. Post-deposition anneals show that the films are thermally stable up to 900 degrees C. The films exhibit age hardening up to 1100 degrees C with an increase in hardness from 19.4 GPa for as-deposited films to 27.1 GPa at 1100 degrees C. At 1100 degrees C out-diffusion of Co and W from the substrate occur, and the films crystallize into c-TiN and h-MN. (C) 2013 Elsevier B.V. All rights reserved.

【 授权许可】

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