Real-time NO2 detection at ppb level with ZnO field-effect transistors

SENSORS AND ACTUATORS B-CHEMICAL

卷:181

Article

Andringa, Anne-Marije^1,2  Smits, Edsger C. P.³  Klootwijk, Johan H.²  de Leeuw, Dago M.^1,4 

[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

[2] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

[3] Holst Ctr, NL-5656 AE Eindhoven, Netherlands

[4] Max Planck Inst Polymer Res, D-55128 Mainz, Germany

关键词: NO2 sensors;    Field-effect transistor;    Electron trapping;    Threshold voltage shift;    Stretched-exponential;    Real-time sensor;    Dynamic read out;   

DOI  :  10.1016/j.snb.2013.01.026

来源: Elsevier

【 摘 要 】

We present a functional real-time NO2 sensor based on a ZnO field-effect transistor. The dynamic response of the sensor is calculated using a phenomenological charge trapping model, using only experimentally determined parameters. This analytical model is implemented in the sensor protocol to create a hardware demonstrator sensor. We show that the partial NO2 pressure in ambient air can be monitored in real-time for concentrations as low as 40 ppb. The response is verified by simultaneously measuring the NO2 content with a calibrated reference sensor. A perfect agreement between the measured and reference data is obtained, which validates the methodology. The sensor is fabricated using standard IC technology, which can easily be miniaturized and used in handheld applications. (c) 2013 Elsevier B.V. All rights reserved.

【 授权许可】

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