Achievement of High-Response Organic Field-Effect Transistor NO2 Sensor by Using the Synergistic Effect of ZnO/PMMA Hybrid Dielectric and CuPc/Pentacene Heterojunction

Sensors

Lu Li¹  Jiang Cheng¹  Shijiao Han²  Huidong Fan²  Junsheng Yu² 

[1] Co-Innovation Center for Micro/Nano Optoelectronic Materials and Devices, Research Institute for New Materials and Technology, Chongqing University of Arts and Sciences, Chongqing 402160, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;

关键词: NO2 sensors;    organic field-effect transistor (OFET);    synergistic effect;    ZnO/PMMA hybrid dielectric;    heterojunction structure;   

DOI  :  10.3390/s16101763

来源: DOAJ

【 摘 要 】

High-response organic field-effect transistor (OFET)-based NO2 sensors were fabricated using the synergistic effect the synergistic effect of zinc oxide/poly(methyl methacrylate) (ZnO/PMMA) hybrid dielectric and CuPc/Pentacene heterojunction. Compared with the OFET sensors without synergistic effect, the fabricated OFET sensors showed a remarkable shift of saturation current, field-effect mobility and threshold voltage when exposed to various concentrations of NO2 analyte. Moreover, after being stored in atmosphere for 30 days, the variation of saturation current increased more than 10 folds at 0.5 ppm NO2. By analyzing the electrical characteristics, and the morphologies of organic semiconductor films of the OFET-based sensors, the performance enhancement was ascribed to the synergistic effect of the dielectric and organic semiconductor. The ZnO nanoparticles on PMMA dielectric surface decreased the grain size of pentacene formed on hybrid dielectric, facilitating the diffusion of CuPc molecules into the grain boundary of pentacene and the approach towards the conducting channel of OFET. Hence, NO2 molecules could interact with CuPc and ZnO nanoparticles at the interface of dielectric and organic semiconductor. Our results provided a promising strategy for the design of high performance OFET-based NO2 sensors in future electronic nose and environment monitoring.

【 授权许可】

Unknown