| POLYMER | 卷:114 |
| Synergistic dielectric and semiconducting properties in fluorescein monopotassium salt random copolymers | |
| Article | |
| Zhao, Zhongqiang1,2,3  Zhang, Zhongbo3,4  Pejic, Sandra4  Zhang, Guoqiang3  Zhu, Yufeng3  Liu, Hewen1,2  Litt, Morton3  Sauve, Genevieve4  Zhu, Lei3,4  | |
| [1] Univ Sci & Technol China, Chinese Acad Sci, Key Lab Soft Matter Chem, 96 Jinzhai Rd, Hefei 230026, Anhui, Peoples R China | |
| [2] Univ Sci & Technol China, Dept Polymer Sci & Engn, 96 Jinzhai Rd, Hefei 230026, Anhui, Peoples R China | |
| [3] Case Western Reserve Univ, Dept Macromol Sci & Engn, Cleveland, OH 44106 USA | |
| [4] Case Western Reserve Univ, Dept Chem, Cleveland, OH 44106 USA | |
| 关键词: Semiconducting polymers; Dielectric constant; Fluorescein monopotassium salt; Charge carrier mobility; Optical band gap; | |
| DOI : 10.1016/j.polymer.2017.02.095 | |
| 来源: Elsevier | |
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【 摘 要 】
The low dielectric constant (epsilon(r)-3-4) for semiconducting polymers has been a major cause for their poor performance compared with the inorganic semiconductors, which possess high dielectric constants above 10. This study aimed to increase the electronic/atomic dielectric constant at high frequencies (i.e., epsilon(r infinity)) for semiconducting polymers. A new design strategy was proposed based on the electric field-induced tautomeric structures in conjugated fluorescein. To achieve this goal, fluorescein monopotassium salt-containing random copolymers were synthesized with 50 and 75 mol.% functionality. To reduce the strong electrostatic attraction between the K+ cation and the phenolate anion, 18-crown-6 ether was complexed with K+ in the fluorescein copolymers. A relatively high epsilon(r infinity) of similar to 5.5 and high electron mobility of 0.153 cm(2)/(V.s) were achieved for the 75 mol.% fluorescein K+/18C6 copolymer. The high electron mobility could be attributed to the relatively high static dielectric constant (epsilon(rs) similar to 9 at 1 Hz) of the sample. The fluorescein monopotassium salt copolymers behaved as n-type semiconductors with an optical band gap around 2.26 eV. (C) 2017 Elsevier Ltd. All rights reserved.
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【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| 10_1016_j_polymer_2017_02_095.pdf | 1873KB |
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