Evidence of Bipolar Resistive Switching Memory in Perovskite Solar Cell

IEEE Journal of the Electron Devices Society

Vijaya Subbiah¹  Anandan Sambandam¹  Heinz-Christoph Neitzert²  Giovanni Landi²  K. Srinivas Reddy³  Praveen C. Ramamurthy³  Andrea Sorrentino⁴ 

[1] Department of Chemistry, Nanomaterials and Solar Energy Conversion Laboratory, National Institute of Technology, Tiruchirappalli, India;Department of Industrial Engineering, University of Salerno, Fisciano, Italy;Department of Materials Engineering, Indian Institute of Science, Bengaluru, India;Institute for Polymers, Composites and Biomaterials, National Research Council of Italy, Portici, Italy;

关键词: Charge carrier mobility;    perovskite solar cells;    resistive switching memory;    vacancy migration;   

DOI  :  10.1109/JEDS.2018.2820319

来源: DOAJ

【 摘 要 】

In hybrid inorganic-organic perovskite solar cells a very stable bipolar resistive switching behavior in the dark current-voltage characteristics at low-voltages has been observed. The possible use of the solar cell as an electrical memory with a moderate on-off contrast but very good stability over a prolonged time has been suggested. The reversible behavior and the long dynamics during the write/erase processes indicate that the physical mechanism behind the switching is related to polarization effects. A detailed analysis of the charge carrier trapping/detrapping, transport, and recombination mechanisms has been performed by taking the ion migration and the consequent charge carrier accumulation within the device into account. The charge transport during the write operation can be described by space-charge-limited conduction process. The formation and subsequent interruption of conducting pathways due to ion migration have been identified as the main cause of the resistive switching within the perovskite material. The strong interaction between the ion movement and the electron transport enables the operation of the perovskite solar cell also as a non-volatile memory.

【 授权许可】

Unknown