Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

Article; Early Access

关键词: GAN;    LEAKAGE;    KINK;    GAAS;   

DOI  :  10.1109/TED.2023.3270134

来源: SCIE

【 摘 要 】

DC characteristics of AlGaN/GaN HEMTs with different thickness values of the undoped GaN channel layer were compared. An abnormal transconductance (gm) overshoot accompanied by a negative threshold voltage (V-TH) shift was observed during IDS-V-GS sweep in devices with thinner GaN layer. At the same time, a non-monotonic increase in gate current was observed. In OFF-state, electron trapping occurs in the undoped GaN layer or at the GaN/AlN interface, leading to a positive VTH shift. When the device is turning on at a sufficiently high V-DS, electron de-trapping occurs due to trap impact-ionization; consequently, V-TH and therefore ID suddenly recovers, leading to the gm overshoot effect. These effects are attributed to electron trap impact-ionization and consequent modulation of the device's electric field.

【 授权许可】

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