Effect of Passivation Layers Permittivity on DC and RF Parameters of GaN MESFETs

Indian Journal of Pure & Applied Physics

article

N Abdaoui¹  I Hadjoub¹  A Doghmane¹  L Abid¹  Z Hadjoub¹ 

[1] Laboratoire des Semi-conducteurs, Département de Physique, Faculté des Sciences, Université Badji-Mokhtar;ÉcoleNationale Supérieure deTechnologie et d'Ingénierie

关键词: GaN MESFET;    DC;    RF parameters;    Breakdown voltage;    Power density;    Access capacitances;    Article;   

DOI  :  10.56042/ijpap.v61i2.67097

来源: National Institute of Science Communication and Information Resources

【 摘 要 】

Surface passivation impact on DC and RF characteristics of GaN MESFETs was studied using ATLAS simulator from Silvaco. It has been shown that when the relative permittivity, εr, of the inter-electrode passivation layers increases, the breakdown voltage as well as the maximum output power density increases thus improving the applications of the MESFET device in high voltage and high power. However, the high values of relative permittivity lead to an increase in the gatesource CGS and gate-drain CGD capacitances on which the radio frequency performance of GaN MESFET transistors depends strongly. In effect, this increase leads to a limitation of the performances, RF of the GaN MESFET transistors. Finally, the variations of the parameters studied as a function of εr have been quantified and mathematical expressions are established. These formulas can be very useful for the judicious choice of the passivation layer in GaN MESFETs.

【 授权许可】

Unknown