Implementation of Basic ChargeConfigurations to Charge Simulation Methodfor Electric Field Calculations

International Journal of Advanced Research in Electrical, Electronics and Instrumentation Engineering

article

Himadri Das¹ 

[1] Dept. of EE, NERIST

关键词: HV;    CSM;    contour points;    fictitious charges;    electric field;   

来源: Research & Reviews

【 摘 要 】

Knowledge of electric field and potential distribution along high voltage insulators is of great importance in the design, operation and performance of the equipment. Most of high voltage field problems are so complex that graphical, experimental or analytical method of solution is very difficult. Hence, numerical methods of field calculation have been developed. In view of innumerable possibilities of complex electrode geometry configurations in equipments, and the electric fields being complex in these regions, analytical solutions for Electric Field Intensity are extremely difficult. The charge simulation method (CSM), due to its favourable characteristics, is very commonly used for field analysis of HV insulation systems. In this paper, it has been tried to implement the basic charge configuration that is point, line and ring charges to CSM for electric field calculations and the results have been validated with that obtained by the analytical method.

【 授权许可】

Unknown