A 20MHz 4A gate driver with 5.5 to 24V output drive voltage for wide bandgap FETs

IEICE Electronics Express

article

Dejin Zhou¹  Hongliang Lu¹  Shu Yuan²  Ningye He⁴  Yuan Xu⁴  Rengxia Ning⁴  Zhenhai Chen³  Wei Huang¹ 

[1] School of Microelectronics, Fudan University;Institute of Microelectronics of Chinese Academy of Sciences;Wuxi Research Institute of Applied Technologies, Tsinghua University;Huangshan University, Engineering Technology Research Center of Intelligent Microsystems;SiCChip Technologies Inc.

关键词: gate driver;    GaN HEMT;    SiC MOSFET;    level shift;    LDO;   

DOI  :  10.1587/elex.19.20220267

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

A high-speed gate driver circuit which can meet both GaN FET and SiC MOSFET is presented. High-speed output drive circuit with wide output drive voltage is introduced in the driver circuit to improve speed and efficiency. By using high-speed level shift circuit and floating step-down low dropout regulator (LDO) circuit, the signal amplitude of the internal circuit for the output drive circuit is reduced, and the speed is greatly improved. Based on the proposed output drive circuit, a galvanically isolated 20MHz 4A gate driver using capacitive coupling with 5.5V to 24V output drive voltage is design and implemented in 180nm BCD process. Test results show the prototype gate driver achieves the rise and fall time of 2.2ns and 2.5ns respectively under 5.5V supply for GaN FET driving, and the rise and fall time of 4.1ns and 4.6ns respectively under 24V supply for SiC MOSFET driving with 20 MHz frequency.

【 授权许可】

CC BY