Optimized fast data migration for hybrid DRAM/STT-MRAM main memory

IEICE Electronics Express

article

Chenji Liu¹  Lan Chen¹  Xiaoran Hao¹  Mao Ni¹ 

[1] Institute of Microelectronics of Chinese Academy of Sciences;University of Chinese Academy of Sciences;Beijing Key Laboratory of Three-dimensional and Nanometer Integrated Circuit Design Automation Technology

关键词: STT-MRAM;    hybrid main memory;    migration;    energy saving;   

DOI  :  10.1587/elex.18.20210493

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

In order to reduce the main memory energy of the IoT terminal, STT-MRAM is used to replace DRAM to save refresh energy. However, the write performance of STT-MRAM cells is worse than that of DRAM. Our previous work proposed a hybrid DRAM/STT-MRAM main memory and fast data migration to reduce the adverse effects of poor write performance of STT-MRAM cells with negligible performance overhead. This article optimizes the migration algorithm and experiment scheme: 1. Reduce the storage overhead of the algorithm. 2. Realize the continuous work of the algorithm. 3. Consider the impact of system standby time on main memory energy. The results show that compared with our previous work, the storage overhead of the algorithm is reduced 99.8%. When the system standby time is zero, the energy of the hybrid main memory (including the energy of the algorithm) is reduced by 4% on average compared to DRAM. The longer the system standby time, the more energy saving.

【 授权许可】

CC BY