A 21.6dBm CMOS power amplifier using a compact high-k output transformer for X-band application

IEICE Electronics Express

article

Bingfei Dou¹  Siwei Huang¹  Jiajin Song¹  Xiao Li¹  Zongming Duan¹  Xiaojiang Yao²  Dongping Xiao¹  Yongjie Li¹  Liguo Sun³ 

[1] Anhui Antenna and Microwave Engineering Laboratory;Nanjing University of Posts and Telecommunications;University of Science and Technology of China

关键词: silicon CMOS;    power amplifier;    RF integrated circuit;    on-chip transformer;   

DOI  :  10.1587/elex.18.20210377

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

CMOS power amplifier (PA) has advantages in power consumption and integration, while the lower operating voltage limits its output power. An area efficient power combiner needs to be designed to improve the output power of CMOS PA. An X-band integrated PA using 65-nm CMOS bulk technology was presented in this work. The whole PA consists of two differential stages: a one-way drive amplifier and a two-way main amplifier. By employing a compactly designed high-k output transformer, the CMOS PA occupied a small core-area of 0.47×0.57mm2, and delivered 21.6dBm of measured saturated output power with 23.6% of power-added efficiency at 10GHz from a 1.2-V power supply. Simultaneously, this PA can operate well in 8∼15GHz wideband.

【 授权许可】

CC BY