Hole spin polarization in Ga1-xAlxAs : Mn structures

Article

关键词: TRANSPORT-PROPERTIES;    (GA;    FERROMAGNETISM;    MN)AS;    MAGNETORESISTANCE;    MAGNETOTRANSPORT;    INJECTION;    LAYERS;   

DOI  :  10.1103/PhysRevB.63.153305

来源: SCIE

【 摘 要 】

A self-consistent calculation of the electronic properties of Gal(1-x)Al(x)As:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations. The available experimental results are compared with the theory.

【 授权许可】

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