Magnetic domains in III-V magnetic semiconductors

Article

关键词: INDUCED FERROMAGNETISM;    TRANSPORT-PROPERTIES;    TRANSITION;    (GA;    MAGNETORESISTANCE;    HETEROSTRUCTURES;    TEMPERATURE;    (GA,MN)AS;    MN)AS;   

DOI  :  10.1103/PhysRevB.64.241201

来源: SCIE

【 摘 要 】

Recent progress in the theoretical understanding of magnetic anisotropy and stiffness in Ill-V magnetic semiconductors is exploited for predictions of magnetic domain characteristics and methods of their tuning. We evaluate the width and the energy of domain walls as well as the period of stripe domains in perpendicular films. The computed stripe width W = 1.1 mum for Ga0.957Mn0.043As/In0.16Ga0.84As compares favorably to the experimental value 1.5 mum, as determined by Shono et al. [Appl. Phys. Lett. 77, 1363 (2000)].

【 授权许可】

Free