Photoluminescence investigations of two-dimensional hole Landau levels in p-type single AlxGa1-xAs/GaAs heterostructures

Article

关键词: GAAS/ALXGA1-XAS QUANTUM-WELLS;    2-DIMENSIONAL ELECTRON-GAS;    FERMI-EDGE SINGULARITY;    RADIATIVE RECOMBINATION;    EXCITONIC ENHANCEMENT;    UNIAXIAL COMPRESSION;    DOPED SEMICONDUCTORS;    CYCLOTRON-RESONANCE;    CARRIER CONFINEMENT;    MAGNETIC-FIELDS;   

DOI  :  10.1103/PhysRevB.67.035305

来源: SCIE

【 摘 要 】

We study the energy structure of two-dimensional holes in p-type single Al1-xGaxAs/GaAs heterojunctions under a perpendicular magnetic field. Photoluminescence measurments with low densities of excitation power reveal rich spectra containing both free and bound-carrier transitions. The experimental results are compared with energies of valence-subband Landau levels calculated using a numerical procedure and good agreement is achieved. Additional lines observed in the energy range of free-carrier recombinations are attributed to excitonic transitions. We also consider the role of many-body effects in photoluminescence spectra.

【 授权许可】

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