Coupled free-carrier and exciton relaxation in optically excited semiconductors

Article

关键词: GAAS/ALXGA1-XAS QUANTUM-WELLS;    MONTE-CARLO;    PHOTOEXCITED ELECTRONS;    POLAR SEMICONDUCTORS;    ULTRAFAST RELAXATION;    LASER EXCITATION;    GAAS;    DYNAMICS;    THERMALIZATION;    SPECTROSCOPY;   

DOI  :  10.1103/PhysRevB.54.4660

来源: SCIE

【 摘 要 】

The energy relaxation of coupled free-carrier and exciton populations in semiconductors after low-density ultrafast optical excitation is studied through a kinetic approach. The set of semiclassical Boltzmann equations, usually written for electron and hole populations only, is complemented by an additional equation for the exciton distribution. The equations are coupled by reaction terms describing phonon-mediated exciton binding and dissociation. All the other relevant scattering mechanisms, such as carrier-carrier, carrier-phonon, and exciton-phonon interactions, are also included. The resulting system of rate equations in reciprocal space is solved by an extended ensemble Monte Carlo method. As a first application, we show results for the dynamics of bulk GaAs in the range from 1 to similar to 200 ps after photoexcitation. The build-up of an exciton population and its sensitivity to the excitation conditions are discussed in detail. As a consequence of the pronounced energy dependence of the LO-phonon-assisted transition probabilities between free-pair states and excitons, it is found that the efficiency of the exciton-formation process and the temporal evolution of the resulting population are sensitive to the excitation energy. We discuss the effects on luminescence experiments.

【 授权许可】

Free