Ultrafast spin-polarized lasing in a highly photoexcited semiconductor microcavity at room temperature

Article

关键词: SPONTANEOUS EMISSION FACTOR;    BOSE-EINSTEIN CONDENSATION;    ELECTRON-HOLE GAS;    FERROMAGNETIC SEMICONDUCTOR;    THRESHOLD REDUCTION;    QUANTIZED VORTICES;    GROUND-STATE;    QUANTUM;    EXCITONS;    RELAXATION;   

DOI  :  10.1103/PhysRevB.91.195312

来源: SCIE

【 摘 要 】

We demonstrate room-temperature spin-polarized ultrafast (similar to 10 ps) lasing in a highly optically excited GaAs microcavity. This microcavity is embedded with InGaAs multiple quantum wells in which the spin relaxation time is less than 10 ps. The laser radiation remains highly circularly polarized even when excited by nonresonant elliptically polarized light. The lasing energy is not locked to the bare cavity resonance, and shifts similar to 10 meV as a function of the photoexcited density. Such spin-polarized lasing is attributed to a spin-dependent stimulated process of correlated electron-hole pairs. These pairs are formed near the Fermi edge in a high-density electron-hole plasma coupled to the cavity light field.

【 授权许可】

Free